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dg408bp45 1/19 applications n variable speed a.c. motor drive inverters (vsd-ac) n uninterruptable power supplies n high voltage converters n choppers n welding n induction heating n dc/dc converters. features n double side cooling n high reliability in service n high voltage capability n fault protection without fuses n high surge current capability n turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements key parameters i tcm 1000a v drm 4500v i t(av) 320a dv d /dt 1000v/ m s di t /dt 300a/ m s outline type code: p. see package details for further information. voltage ratings 4500 dg408bp45 conditions type number t vj = 125 o c, i dm = 50ma, i rrm = 50ma repetitive peak off-state voltage v drm v repetitive peak reverse voltage v rrm v 16 current ratings symbol parameter conditions max. i tcm t hs = 80 o c. double side cooled. half sine 50hz. v d = v drm , t j = 125 o c, di gq /dt = 30a/ m s, cs = 1.0 m f rms on-state current a a a 1000 320 500 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled. half sine 50hz. i t(rms) i t(av) mean on-state current dg408bp45 gate turn-off thyristor ds4091-4 july 2014 (ln31735)
dg408bp45 2/19 surge ratings conditions 7.0 0.245 x 10 6 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 225 v/ m s max. units rate of rise of off-state voltage dv d /dt 1000 v/ m s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 3000v, i t = 1000a, t j = 125 o c, i fg > 30a, rise time > 1.5 m s a/ m s to 66% v drm ; r gk 1.5 w , t j = 125 o c gate ratings symbol parameter conditions v units max. 16 10 min. - 20 - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 15 60 -20 15 - - m s 100 70 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) m s a/ m s kw w a thermal ratings and mechanical data symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - - 0.1 - 0.009 o c/w per contact cathode side cooled double side cooled units - 0.041 o c/w anode side cooled o c/w 0.07 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force - 125 15.0 11.0 -40 kn o c/w clamping force 12.0kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c - l s peak stray inductance in snubber circuit 200 nh
dg408bp45 3/19 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50- turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 3000 v rgm = 16v, no gate/cathode resistor m c i t = 1000a, v dm = v drm snubber cap cs = 1.0 m f, di gq /dt = 30a/ m s t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units - 3.5 v v drm = 4500v, v rg = 0v - 50 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 1.0 v v d = 24v, i t = 100a, t j = 25 o c - 1.5 a ma mj 2300 - v d = 3000v i t = 1000a, di t /dt = 300a/ m s i fg = 30a, rise time < 1.5 m s m s 1.5- - 5.0 m s - 4120 mj - 14.0 m s m s 1.5- m s 15.5- - 6000 m c - 420 a at 1000a peak, i g(on) = 4a d.c.
dg408bp45 4/19 curves -50 -25 0 25 50 75 100 125 150 junction temperature t j - (c) 0 1.0 2.0 3.0 4.0 gate trigger current i gt - (a) 0 0.5 1.0 1.5 2.0 gate trigger voltage v gt - (v) i gt v gt 1.0 2.0 3.0 4.0 5.0 instantaneous on-state voltage v tm - (v) 0 0.5 1.0 1.5 2.0 instantaneous on-state current i tm - (ka) measured under pulse conditions. i g(on) = 4.0a half sine wave 10ms t j = 125c t j = 25c 0.25 0.50 1.00 1.5 2.0 snubber capacitance c s - (f) 0 0.5 1.0 1.5 maximum permissible turn-off current i tcm - (ka) conditions: t j = 125c, v dm = v drm , di gq /dt = 30a/s 0.75 1.25 1.75 fig.1 maximum gate trigger voltage/current vs junction temperature fig.2 on-state characteristics fig.3 maximum dependence of i tcm on c s
dg408bp45 5/19 0 0.01 0.02 0.03 0.04 0.001 0.01 0.1 1.0 10 time - (s) thermal impedance - c/w dc 100 0.05 0 5 10 15 20 0.0001 0.001 0.01 0.1 1.0 pulse duration - (s) peak half sine wave on-state current - (ka) fig.4 maximum (limit) transient thermal impedance - double side cooled fig.5 surge (non-repetitive) on-state current vs time
dg408bp45 6/19 0 200 400 600 70 80 90 100 120 130 mean on-state current i t(av) - (a) maximum permissible case temperature - (c) 1500 1000 500 0 mean on-state power dissipation - (w) conditions: i g(on) = 4.0a 180 120 60 30 dc 0 100 200 300 80 90 100 120 130 mean on-state current i t(av) - (a) maximum permissible case temperature - (c) 1500 1000 500 0 mean on-state power dissipation - (w) conditions: i g(on) = 4.0a 120 90 60 30 180 50 150 250 350 fig.6 steady state rectangluar wave conduction loss - double side cooled fig.7 steady state sinusoidal wave conduction loss - double side cooled
dg408bp45 7/19 0 250 500 750 1000 1250 1500 on-state current i t - (a) 2000 1500 1000 500 0 turn-on energy loss e on - (mj) v d = 3000v v d = 2000v v d = 1000v 2250 conditions: t j = 25c, i fgm = 30a, c s = 1.0f, di/dt = 300a/s, di fg /dt = 30a/s 1750 1250 750 250 0 20406080 peak forward gate current i fgm - (a) 2500 2000 1500 1000 500 turn-on energy loss e on - (mj) conditions: t j = 25c, i t = 1000a, c s = 1.0f, r s = 10 ohms di/dt = 300a/s, di fg /dt = 30a/s v d = 3000v v d = 2000v v d = 1000v 2750 2250 1750 1250 750 fig.8 turn-on energy vs on-state current fig.9 turn-on energy vs peak forward gate current
dg408bp45 8/19 fig.10 turn-on energy vs on-state current 0 250 500 750 1000 1250 1500 on-state current i t - (a) 2000 1500 1000 500 0 turn-on energy loss e on - (mj) conditions: t j = 125c, i fgm = 30a, c s = 1.0f, r s = 10 ohms, di t /dt = 300a/s di fg /dt = 30a/s v d = 3000v v d = 2000v v d = 1000v 2500 0 20406080 peak forward gate current i fgm - (a) 2500 2000 1500 1000 750 turn-on energy loss e on - (mj) conditions: t j = 125c, i t = 1000a, c s = 1.0f, r s = 10 ohms, di/dt = 300a/s, di fg /dt = 30a/s v d = 2000v v d = 3000v v d = 1000v 1250 1750 2250 2750 0 100 200 300 rate of rise of on-state current di t /dt - (a/s) 4000 3000 2000 1000 0 turn-on energy loss e on - (mj) v d = 2000v v d = 3000v v d = 1000v 3500 2500 1500 500 conditions: i t = 1000a, t j = 125c, c s = 1.0f r s = 10 ohms i fgm = 30a, di fg /dt = 30a/s fig.11 turn-on energy vs peak forward gate current fig.12 turn-on energy vs rate of rise of on-state current
dg408bp45 9/19 0 20406080 peak forward gate current i fgm - (a) 8.0 6.0 4.0 2.0 0 turn-on delay time and rise time - (s) conditions: t j = 125c, i t = 1000a, c s = 1.0f, r s = 10 ohms, di/dt = 300a/s, di fg /dt = 30a/s, v d = 3000v t d t r 1.0 3.0 5.0 7.0 0 250 500 750 1000 1250 1500 on-state current i t - (a) 5.0 4.0 3.0 2.0 1.0 turn-on delay and rise time - (s) conditions: t j = 125c, i fgm = 30a, c s = 1.0f, v d = 3000v, r s = 10 ohms, di t /dt = 300a/s t d t r fig.13 delay time & rise time vs turn-on current fig.14 delay time & rise time vs peak forward gate current
dg408bp45 10/19 0 250 500 750 1000 1250 1500 on-state current i t - (a) 2000 1500 1000 500 0 turn-off energy loss e off - (mj) conditions: t j = 25c, c s = 1.0f, di gq /dt = 30a/s 0.5x v drm 0.75x v drm v drm 2500 10 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/s) 2500 2250 2000 1750 1500 turn-off energy per pulse e off - (mj) conditions: t j = 25c, c s = 1.0f, i t = 1000a 0.5x v drm 0.75x v drm v drm fig.15 turn-off energy vs on-state current fig.16 turn-off energy vs rate of rise of reverse gate current
dg408bp45 11/19 0 250 500 750 1000 1250 1500 on-state current i t - (a) 4000 3000 2000 1000 0 turn-off energy loss e off - (mj) conditions: t j = 125c, c s = 1.0f, di gq /dt = 30a/s 0.5x v drm 0.75x v drm v drm 5000 10 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/s) 4500 4000 3500 3000 2500 turn-off energy per pulse e off - (mj) conditions: t j = 125c, c s = 1.0f, i t = 1000a 0.5x v drm 0.75x v drm v drm fig.17 turn-off energy vs on-state current fig.18 turn-off energy loss vs rate of rise of reverse gate current
dg408bp45 12/19 0 250 500 750 1000 1250 1500 on-state current i t - (a) 4000 3000 2000 1000 0 turn-off energy per pulse e off - (mj) conditions: t j = 125c, v dm = v drm , di gq /dt = 30a/s c s = 1.5f c s = 0.5f 5000 c s = 1.0f c s = 2.0f 0 250 500 750 1000 1250 1500 on-state current i t - (a) 20.0 15.0 10.0 5.0 0 gate storage time t gs - (s) conditions: c s = 1.0f, di gq /dt = 30a/s t j = 25c t j = 125c fig.19 turn-off energy vs on-state current fig.20 gate storage time vs on-state current
dg408bp45 13/19 fig.22 gate fall time vs on-state current fig.21 gate storage time vs rate of rise of reverse gate current 10 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/s) 25 20 15 10 5 gate storage time t gs - (s) conditions: c s = 1.0f, i t = 1000a t j = 25c t j = 125c 0 250 500 750 1000 1250 1500 on-state current i t - (a) 2.0 1.5 1.0 0.5 0 gate fall time t gf - (s) conditions: c s = 1.0f, di gq /dt = 30a/s t j = 25c t j = 125c
dg408bp45 14/19 fig.23 gate fall time vs rate of rise of reverse gate current 10 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/s) 2.00 1.75 1.50 1.25 1.00 gate fall time t gf - (s) conditions: c s = 1.0f, i t = 1000a t j = 25c t j = 125c 0 250 500 750 1000 1250 1500 turn-off current i t - (a) 500 400 300 200 100 peak reverse gate current i gqm - (a) conditions: c s = 1.0f, di gq /dt = 30a/s t j = 25c t j = 125c fig.24 peak reverse gate current vs turn-off current
dg408bp45 15/19 10 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/s) 450 400 350 300 250 peak reverse gate current i gqm - (a) conditions: c s = 1.0f, i t = 1000a t j = 25c t j = 125c 500 0 250 500 750 1000 1250 1500 on-state current i t - (a) 4000 3000 2000 1000 0 total turn-off gate charge q gq - (c) conditions: c s = 1.0f, di gq /dt = 30a/s t j = 25c t j = 125c fig.25 peak reverse gate current vs rate of rise of reversegate current fig.26 turn-off gate charge vs on-state current
dg408bp45 16/19 10 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/s) 3500 3000 2500 2000 1500 turn-off gate charge q gq - (c) conditions: c s = 1.0f, i t = 1000a t j = 25c t j = 125c 4000 0 250 500 750 1000 0.1 1 10 100 gate cathode resistance r gk - (ohms) rate of rise of off-state voltage dv/dt - (v/ s) conditions: v d = 66% v drm t j = 125c 1000 fig.27 turn-off gate charge vs rate of rise of reverse gate current fig.28 rate of rise of off-state voltage vs gate cathode resistance
dg408bp45 17/19 anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq recommended gate conditions: i tcm = 1000a i fg = 30a i g(on) = 4a d.c. t w1(min) = 20s i gqm = 420a di gq /dt = 30a/s q gq = 3000c v rg(min) = 2v v rg(max) = 16v these are recommended dynex semiconductor conditions. other conditions are permitted according to users gate drive specifications. fig.29 general switching waveforms
dg408bp45 18/19 20 gate ?38 nom ?56 max ?57.5 max ?63.5 max ?38 nom ?51 nom cathode anode 27.0 25.5 18 nom 2 holes ?3.6 0.1 x 1.95 0.05 deep auxiliary cathode nominal weight: 350g clamping force: 12kn 10% lead coaxial, length: 600mm package outine type code: p package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwise. do not scale. associated publications title application note number calculating the junction temperature or power semiconductors an4506 gto gate drive units an4571 recommendations for clamping power semiconductors an4839 use of v to , r t on-state characteristic an5001 impoved gate drive for gto series connections an5177
important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .

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